PART |
Description |
Maker |
APT11GP60K APT11GP60SA |
MOSFET POWER MOS 7 IGBT 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo... Advanced Power Technology MICROSEMI POWER PRODUCTS GROUP
|
APT50GP60B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT75GP120B2 |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT80GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET MOS Field Effect Transistor From old datasheet system SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
APT40GP60B2DQ2G APT40GP60B2DQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technolo... Advanced Power Technology
|